G3R30MT12K GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 38.6 EUR |
| 10+ | 36.48 EUR |
| 30+ | 30.31 EUR |
| 120+ | 28.79 EUR |
| 270+ | 27.84 EUR |
| 510+ | 27.14 EUR |
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Technische Details G3R30MT12K GeneSiC Semiconductor
Description: SIC MOSFET N-CH 90A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 12mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V.
Weitere Produktangebote G3R30MT12K nach Preis ab 26.07 EUR bis 45.14 EUR
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G3R30MT12K | Hersteller : Navitas Semiconductor, Inc. |
 Description: SIC MOSFET N-CH 90A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 12mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V |
auf Bestellung 373 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R30MT12K | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W Mounting: THT Case: TO247-4 Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 155nC On-state resistance: 30mΩ Drain current: 63A Pulsed drain current: 200A Power dissipation: 400W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
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