G3R30MT12K GeneSiC Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 40.59 EUR |
| 10+ | 37.28 EUR |
| 30+ | 36.05 EUR |
| 120+ | 35.14 EUR |
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Technische Details G3R30MT12K GeneSiC Semiconductor
Description: SIC MOSFET N-CH 90A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 12mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V.
Weitere Produktangebote G3R30MT12K nach Preis ab 30.63 EUR bis 53.07 EUR
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G3R30MT12K | Navitas Semiconductor, Inc. |
 Description: SIC MOSFET N-CH 90A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 12mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V |
auf Bestellung 670 Stücke: Lieferzeit 10-14 Tag (e) |
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| G3R30MT12K |
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Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
Description: SIC MOSFET N-CH 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
auf Bestellung 670 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 53.07 EUR |
| 30+ | 34.33 EUR |
| 120+ | 30.63 EUR |