GA100JT12-227 GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 160A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
Drain to Source Voltage (Vdss): 1200 V
Part Status: Obsolete
Supplier Device Package: SOT-227
Power Dissipation (Max): 535W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Technische Details GA100JT12-227 GeneSiC Semiconductor
Description: TRANS SJT 1200V 160A SOT227, Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V, Drain to Source Voltage (Vdss): 1200 V, Part Status: Obsolete, Supplier Device Package: SOT-227, Power Dissipation (Max): 535W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 100A, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote GA100JT12-227
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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GA100JT12-227 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 160A Std SiC Junction Transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GA100JT12-227 |
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Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 160A Std SiC Junction Transistor
Discrete Semiconductor Modules 1200V 160A Std SiC Junction Transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH