IRFI9620GPBF Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Description: MOSFET P-CH 200V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 4025 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.67 EUR |
10+ | 4.71 EUR |
100+ | 3.74 EUR |
500+ | 3.17 EUR |
1000+ | 2.69 EUR |
2000+ | 2.55 EUR |
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Technische Details IRFI9620GPBF Vishay Siliconix
Description: MOSFET P-CH 200V 3A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V.
Weitere Produktangebote IRFI9620GPBF nach Preis ab 2.51 EUR bis 5.75 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRFI9620GPBF | Hersteller : Vishay Semiconductors | MOSFET 200V P-CH HEXFET MOSFET |
auf Bestellung 1092 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFI9620GPBF | Hersteller : Vishay | Trans MOSFET P-CH 200V 3A 3-Pin(3+Tab) TO-220 Full-Pak |
Produkt ist nicht verfügbar |
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IRFI9620GPBF | Hersteller : Vishay | Trans MOSFET P-CH 200V 3A 3-Pin(3+Tab) TO-220 Full-Pak |
Produkt ist nicht verfügbar |
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IRFI9620GPBF | Hersteller : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3A; Idm: -12A; 30W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3A Pulsed drain current: -12A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFI9620GPBF | Hersteller : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3A; Idm: -12A; 30W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3A Pulsed drain current: -12A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |