| Anzahl | Privatkunde |
|---|---|
| 124+ | 1.43 EUR |
| 127+ | 1.37 EUR |
| 128+ | 1.33 EUR |
| 500+ | 1.27 EUR |
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Technische Details IRFI9620GPBF Vishay
Description: MOSFET P-CH 200V 3A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.
Weitere Produktangebote IRFI9620GPBF nach Preis ab 1.15 EUR bis 6.15 EUR
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IRFI9620GPBF | Vishay |
 Trans MOSFET P-CH 200V 3A 3-Pin(3+Tab) TO-220 Full-Pak |
auf Bestellung 755 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI9620GPBF | Vishay Siliconix |
Description: MOSFET P-CH 200V 3A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
auf Bestellung 4283 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFI9620GPBF | Vishay Semiconductors |
MOSFETs TO220 200V 3A P-CH MOSFET |
auf Bestellung 1267 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFI9620GPBF |
|
Hersteller: Vishay
Trans MOSFET P-CH 200V 3A 3-Pin(3+Tab) TO-220 Full-Pak
Trans MOSFET P-CH 200V 3A 3-Pin(3+Tab) TO-220 Full-Pak
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 105+ | 1.69 EUR |
| 124+ | 1.37 EUR |
| 127+ | 1.29 EUR |
| 128+ | 1.23 EUR |
| 500+ | 1.15 EUR |
| IRFI9620GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: MOSFET P-CH 200V 3A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 4283 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.48 EUR |
| 11+ | 1.96 EUR |
| 100+ | 1.93 EUR |
| 500+ | 1.8 EUR |
| IRFI9620GPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs TO220 200V 3A P-CH MOSFET
MOSFETs TO220 200V 3A P-CH MOSFET
auf Bestellung 1267 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.15 EUR |
| 10+ | 4.02 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.09 EUR |