IRFR1N60APBF VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
68+ | 1.06 EUR |
91+ | 0.79 EUR |
105+ | 0.69 EUR |
117+ | 0.61 EUR |
122+ | 0.59 EUR |
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Technische Details IRFR1N60APBF VISHAY
Description: MOSFET N-CH 600V 1.4A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V.
Weitere Produktangebote IRFR1N60APBF nach Preis ab 0.59 EUR bis 3.61 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFR1N60APBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; 36W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 141 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay | Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
auf Bestellung 5651 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay | Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
auf Bestellung 5651 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 1.4A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V |
auf Bestellung 187 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay Semiconductors | MOSFET N-Chan 600V 1.4 Amp |
auf Bestellung 1529 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay | Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
auf Bestellung 5626 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay | Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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IRFR1N60APBF | Hersteller : Vishay | Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |