IRLI630GPBF

Description: MOSFET N-CH 200V 6.2A TO220-3, Vgs (Max): ±10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Rds On (Max) @ Id, Vgs: 400mOhm @ 3.7A, 5V, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Drain to Source Voltage (Vdss): 200V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tube, Base Part Number: IRLI630, Package / Case: TO-220-3 Full Pack, Isolated Tab, Supplier Device Package: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 35W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, Manufacturer: Vishay Siliconix.