KSB1151YSTU Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: TRANS PNP 60V 5A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
auf Bestellung 11033 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 767+ | 0.62 EUR |
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Technische Details KSB1151YSTU Fairchild Semiconductor
Description: TRANS PNP 60V 5A TO126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V, Supplier Device Package: TO-126-3, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.3 W.
Weitere Produktangebote KSB1151YSTU nach Preis ab 0.45 EUR bis 1.03 EUR
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KSB1151YSTU | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Tube |
auf Bestellung 1441 Stücke: Lieferzeit 14-21 Tag (e) |
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KSB1151YSTU | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Tube |
auf Bestellung 1441 Stücke: Lieferzeit 14-21 Tag (e) |
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KSB1151YSTU | Hersteller : onsemi |
Description: TRANS PNP 60V 5A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W |
auf Bestellung 876 Stücke: Lieferzeit 10-14 Tag (e) |
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KSB1151YSTU | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT PNP Epitaxial Sil |
auf Bestellung 1917 Stücke: Lieferzeit 10-14 Tag (e) |
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KSB1151YSTU | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Tube |
Produkt ist nicht verfügbar |
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KSB1151YSTU | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Tube |
Produkt ist nicht verfügbar |
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| KSB1151YSTU | Hersteller : ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.3W Case: TO126ISO Pulsed collector current: 8A Current gain: 160...320 Mounting: THT Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| KSB1151YSTU | Hersteller : ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.3W Case: TO126ISO Pulsed collector current: 8A Current gain: 160...320 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |