NTE519 NTE Electronics, Inc
                                                Hersteller: NTE Electronics, IncDescription: DIODE GEN PURP 100V 150MA DO35
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 2492 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 17+ | 1.06 EUR | 
| 20+ | 1 EUR | 
| 30+ | 0.95 EUR | 
| 40+ | 0.9 EUR | 
| 50+ | 0.88 EUR | 
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Technische Details NTE519 NTE Electronics, Inc
Description: DIODE GEN PURP 100V 150MA DO35, Packaging: Bag, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 8 ns, Technology: Standard, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Current - Average Rectified (Io): 150mA, Supplier Device Package: DO-35, Operating Temperature - Junction: 200°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA, Current - Reverse Leakage @ Vr: 5 µA @ 75 V. 
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| NTE519 | Hersteller : NTE Electronics | 
            
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