Produkte > NTE ELECTRONICS, INC > NTE519
NTE519

NTE519 NTE Electronics, Inc

nte519.pdf
Hersteller: NTE Electronics, Inc
Description: DIODE GEN PURP 100V 150MA DO35
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: DO-35
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bag
auf Bestellung 2492 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
17+1.06 EUR
20+1 EUR
30+0.95 EUR
40+0.9 EUR
50+0.88 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NTE519 NTE Electronics, Inc

Description: DIODE GEN PURP 100V 150MA DO35, Current - Reverse Leakage @ Vr: 5 µA @ 75 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: 200°C (Max), Supplier Device Package: DO-35, Current - Average Rectified (Io): 150mA, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 8 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Bag.