PBR951,215 NXP Semiconductors
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Technische Details PBR951,215 NXP Semiconductors
Description: RF TRANS NPN 10V 8GHZ TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Power - Max: 365mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 1GHz ~ 2GHz, Supplier Device Package: SOT-23 (TO-236AB).
Weitere Produktangebote PBR951,215
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PBR951,215 | Hersteller : NXP USA Inc. |
 Description: RF TRANS NPN 10V 8GHZ TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 365mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 1GHz ~ 2GHz Supplier Device Package: SOT-23 (TO-236AB) |
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PBR951,215 | Hersteller : NXP USA Inc. |
Description: RF TRANS NPN 10V 8GHZ TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 365mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 1GHz ~ 2GHz Supplier Device Package: SOT-23 (TO-236AB) |
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PBR951,215 | Hersteller : NXP Semiconductors |
RF Bipolar Transistors NPN UHF 100MA |
Produkt ist nicht verfügbar |
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| PBR951,215 | Hersteller : Diodes Incorporated |
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