PSMN020-30MLCX NXP USA Inc.
Hersteller: NXP USA Inc.
Description: TRANSISTOR >30MHZ
Packaging: Bulk
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.8A (Tc)
Rds On (Max) @ Id, Vgs: 18.1mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Description: TRANSISTOR >30MHZ
Packaging: Bulk
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.8A (Tc)
Rds On (Max) @ Id, Vgs: 18.1mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2308+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN020-30MLCX NXP USA Inc.
Description: MOSFET N-CH 30V 31.8A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31.8A (Tc), Rds On (Max) @ Id, Vgs: 18.1mOhm @ 5A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V.
Weitere Produktangebote PSMN020-30MLCX nach Preis ab 0.22 EUR bis 0.78 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN020-30MLCX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 31.8A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.8A (Tc) Rds On (Max) @ Id, Vgs: 18.1mOhm @ 5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
auf Bestellung 1115 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
PSMN020-30MLCX | Hersteller : Nexperia | MOSFETs PSMN020-30MLC/SOT1210/mLFPAK |
auf Bestellung 1557 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
PSMN020-30MLCX | Hersteller : NEXPERIA | Trans MOSFET N-CH 30V 31.8A 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
PSMN020-30MLCX | Hersteller : Nexperia | Trans MOSFET N-CH 30V 31.8A 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
PSMN020-30MLCX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 31.8A Pulsed drain current: 127A Power dissipation: 33W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
PSMN020-30MLCX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 31.8A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.8A (Tc) Rds On (Max) @ Id, Vgs: 18.1mOhm @ 5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
PSMN020-30MLCX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 31.8A Pulsed drain current: 127A Power dissipation: 33W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |