Technische Details PSMN020-30MLCX Nexperia
Description: MOSFET N-CH 30V 31.8A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31.8A (Tc), Rds On (Max) @ Id, Vgs: 18.1mOhm @ 5A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V.
Weitere Produktangebote PSMN020-30MLCX nach Preis ab 0.35 EUR bis 1.16 EUR
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PSMN020-30MLCX | Hersteller : NXP USA Inc. |
 Description: TRANSISTOR >30MHZPackaging: Bulk Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.8A (Tc) Rds On (Max) @ Id, Vgs: 18.1mOhm @ 5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
auf Bestellung 6572 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN020-30MLCX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 31.8A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.8A (Tc) Rds On (Max) @ Id, Vgs: 18.1mOhm @ 5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
auf Bestellung 576 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN020-30MLCX | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 31.8A 8-Pin LFPAK EP T/R |
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PSMN020-30MLCX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 31.8A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.8A (Tc) Rds On (Max) @ Id, Vgs: 18.1mOhm @ 5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
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PSMN020-30MLCX | Hersteller : Nexperia |
MOSFETs SOT1210 N-CH 30V 31.8A |
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| PSMN020-30MLCX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 31.8A Pulsed drain current: 127A Power dissipation: 33W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |