PSMN7R8-120PSQ NXP USA Inc.
Hersteller: NXP USA Inc.Description: MOSFET N-CH 120V 70A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9473 pF @ 60 V
auf Bestellung 242 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 177+ | 4.42 EUR |
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Technische Details PSMN7R8-120PSQ NXP USA Inc.
Description: MOSFET N-CH 120V 70A I2PAK, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 25A, 10V, Power Dissipation (Max): 349W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9473 pF @ 60 V.
Weitere Produktangebote PSMN7R8-120PSQ nach Preis ab 6.55 EUR bis 10.45 EUR
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PSMN7R8-120PSQ | Hersteller : Nexperia |
MOSFET N-channel 120V 7.9mo FET |
auf Bestellung 8 Stücke: Lieferzeit 14-28 Tag (e) |
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