RFP14N05L

RFP14N05L

RFP14N05L

Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 50V 14A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube

FAIRS42848-1.pdf?t.download=true&u=5oefqw
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 26014 Stücke
Lieferzeit 21-28 Tag (e)
760+ 1.02 EUR

Technische Details RFP14N05L

Description: MOSFET N-CH 50V 14A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 5V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

Preis RFP14N05L ab 1.02 EUR bis 1.02 EUR

RFP14N05L
Hersteller: HAR
2001 TO-220
rfd14n05lsm-d.pdf FAIRS42848-1.pdf?t.download=true&u=5oefqw
5610 Stücke
RFP14N05L
Hersteller:

rfd14n05lsm-d.pdf FAIRS42848-1.pdf?t.download=true&u=5oefqw
2065 Stücke
RFP14N05L
Hersteller: Fairchild

rfd14n05lsm-d.pdf FAIRS42848-1.pdf?t.download=true&u=5oefqw
2065 Stücke
RFP14N05L
RFP14N05L
Hersteller: onsemi
Description: MOSFET N-CH 50V 14A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 5V
rfd14n05lsm-d.pdf
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