RM2004NE

RM2004NE

RM2004NE

Hersteller: Rectron
MOSFET SOT-23-6L MOSFET
rm2004ne-1396011.pdf
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Technische Details RM2004NE

Description: MOSFET 2 N-CH 20V 6A SOT23-6, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-6, Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Drain to Source Voltage (Vdss): 20V, FET Feature: Standard, FET Type: 2 N-Channel (Dual), Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Rectron USA, Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.25W (Ta), Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V.

Preis RM2004NE ab 0 EUR bis 0 EUR

RM2004NE
RM2004NE
Hersteller: Rectron USA
Description: MOSFET 2 N-CH 20V 6A SOT23-6
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen