RM4N650IP

RM4N650IP

RM4N650IP

Hersteller: Rectron
MOSFET TO-251 MOSFET
rm4n650ip(ld)-1396031.pdf
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Technische Details RM4N650IP

Description: MOSFET N-CHANNEL 650V 4A TO251, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 46W (Tc).

Preis RM4N650IP ab 0 EUR bis 0 EUR

RM4N650IP
RM4N650IP
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 4A TO251
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen