RM50N200HD

RM50N200HD

RM50N200HD

Hersteller: Rectron USA
Description: MOSFET N-CH 200V 51A TO263-2
Input Capacitance (Ciss) (Max) @ Vds: 1598 pF @ 100 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)

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Technische Details RM50N200HD

Description: MOSFET N-CH 200V 51A TO263-2, Input Capacitance (Ciss) (Max) @ Vds: 1598 pF @ 100 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263-2, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

Preis RM50N200HD ab 0 EUR bis 0 EUR