RM60N30DF

RM60N30DF

RM60N30DF

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 58A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1844 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN

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Technische Details RM60N30DF

Description: MOSFET N-CHANNEL 30V 58A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 1844 pF @ 15 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 46W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN.

Preis RM60N30DF ab 0 EUR bis 0 EUR