RM80N60DF

RM80N60DF

Hersteller: Rectron
MOSFET DFN MOSFET
rm80n60df-1396022.pdf
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Technische Details RM80N60DF

Description: MOSFET N-CHANNEL 60V 80A 8DFN, Packaging: Tape & Reel (TR), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 85W (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Package / Case: 8-PowerVDFN, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V, Drain to Source Voltage (Vdss): 60 V, Mounting Type: Surface Mount.

Preis RM80N60DF ab 0 EUR bis 0 EUR

RM80N60DF
RM80N60DF
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 80A 8DFN
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Package / Case: 8-PowerVDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen