RMP3N90IP

RMP3N90IP

RMP3N90IP

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 900V 3A TO251
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 25V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active

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Technische Details RMP3N90IP

Description: MOSFET N-CHANNEL 900V 3A TO251, Packaging: Tube, Manufacturer: Rectron USA, Package / Case: TO-251-3 Stub Leads, IPak, Supplier Device Package: TO-251, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 50W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 25V, Vgs(th) (Max) @ Id: 5V @ 250µA, Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Drain to Source Voltage (Vdss): 900V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active.

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