SGP6N60UFDTU Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/60ns
Switching Energy: 57µJ (on), 25µJ (off)
Test Condition: 300V, 3A, 80Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 30 W
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/60ns
Switching Energy: 57µJ (on), 25µJ (off)
Test Condition: 300V, 3A, 80Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 30 W
auf Bestellung 869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
503+ | 0.98 EUR |
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Technische Details SGP6N60UFDTU Fairchild Semiconductor
Description: IGBT 600V 6A 30W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 52 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 15ns/60ns, Switching Energy: 57µJ (on), 25µJ (off), Test Condition: 300V, 3A, 80Ohm, 15V, Gate Charge: 15 nC, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 25 A, Power - Max: 30 W.
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auf Bestellung 52500 Stücke: Lieferzeit 21-28 Tag (e) |
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SGP6N60UFDTU | Hersteller : ONSEMI |
Description: ONSEMI - SGP6N60UFDTU - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 869 Stücke: Lieferzeit 14-21 Tag (e) |
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SGP6N60UFDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 6A 30000mW 3-Pin(3+Tab) TO-220 Rail |
Produkt ist nicht verfügbar |
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SGP6N60UFDTU | Hersteller : onsemi |
Description: IGBT 600V 6A 30W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 52 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 15ns/60ns Switching Energy: 57µJ (on), 25µJ (off) Test Condition: 300V, 3A, 80Ohm, 15V Gate Charge: 15 nC Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 25 A Power - Max: 30 W |
Produkt ist nicht verfügbar |