SGP6N60UFDTU

SGP6N60UFDTU Fairchild Semiconductor


FAIRS19045-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/60ns
Switching Energy: 57µJ (on), 25µJ (off)
Test Condition: 300V, 3A, 80Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 30 W
auf Bestellung 869 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
503+0.98 EUR
Mindestbestellmenge: 503
Produktrezensionen
Produktbewertung abgeben

Technische Details SGP6N60UFDTU Fairchild Semiconductor

Description: IGBT 600V 6A 30W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 52 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 15ns/60ns, Switching Energy: 57µJ (on), 25µJ (off), Test Condition: 300V, 3A, 80Ohm, 15V, Gate Charge: 15 nC, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 25 A, Power - Max: 30 W.

Weitere Produktangebote SGP6N60UFDTU

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SGP6N60UFDTU FAIRS19045-1.pdf?t.download=true&u=5oefqw SGP6N60UFD.pdf
auf Bestellung 52500 Stücke:
Lieferzeit 21-28 Tag (e)
SGP6N60UFDTU Hersteller : ONSEMI FAIRS19045-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - SGP6N60UFDTU - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 869 Stücke:
Lieferzeit 14-21 Tag (e)
SGP6N60UFDTU SGP6N60UFDTU Hersteller : ON Semiconductor sgp6n60ufd.pdf Trans IGBT Chip N-CH 600V 6A 30000mW 3-Pin(3+Tab) TO-220 Rail
Produkt ist nicht verfügbar
SGP6N60UFDTU SGP6N60UFDTU Hersteller : onsemi SGP6N60UFD.pdf Description: IGBT 600V 6A 30W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/60ns
Switching Energy: 57µJ (on), 25µJ (off)
Test Condition: 300V, 3A, 80Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 30 W
Produkt ist nicht verfügbar