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SI1499DH-T1-E3

SI1499DH-T1-E3 Vishay Siliconix

si1499dh.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.43 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI1499DH-T1-E3 Vishay Siliconix

Description: MOSFET P-CH 8V 1.6A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V, Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V.

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SI1499DH-T1-E3 SI1499DH-T1-E3 Hersteller : Vishay / Siliconix si1499dh.pdf MOSFETs 8.0V 1.6A 2.78W 78 mohms @ 4.5V
auf Bestellung 8533 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.94 EUR
10+0.83 EUR
100+0.61 EUR
500+0.52 EUR
1000+0.45 EUR
3000+0.41 EUR
6000+0.38 EUR
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SI1499DH-T1-E3 SI1499DH-T1-E3 Hersteller : Vishay Siliconix si1499dh.pdf Description: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
auf Bestellung 4862 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
17+1.09 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
Mindestbestellmenge: 11
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SI1499DH-T1-E3 SI1499DH-T1-E3 Hersteller : Vishay si1499dh.pdf Trans MOSFET P-CH 8V 1.6A 6-Pin SC-70 T/R
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SI1499DH-T1-E3 Hersteller : VISHAY si1499dh.pdf SI1499DH-T1-E3 SMD P channel transistors
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