SI1499DH-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details SI1499DH-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Drain to Source Voltage (Vdss): 8 V, Vgs (Max): ±5V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 800mV @ 250µA, Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1499DH-T1-E3 nach Preis ab 0.38 EUR bis 1.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI1499DH-T1-E3 | Vishay / Siliconix |
MOSFETs 8.0V 1.6A 2.78W 78 mohms @ 4.5V |
auf Bestellung 8533 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SI1499DH-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 1.6A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V |
auf Bestellung 4862 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI1499DH-T1-E3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 8.0V 1.6A 2.78W 78 mohms @ 4.5V
MOSFETs 8.0V 1.6A 2.78W 78 mohms @ 4.5V
auf Bestellung 8533 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.94 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.45 EUR |
| 3000+ | 0.41 EUR |
| 6000+ | 0.38 EUR |
| SI1499DH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
Description: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
auf Bestellung 4862 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.74 EUR |
| 17+ | 1.09 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |