SI4386DY-T1-GE3

SI4386DY-T1-GE3

SI4386DY-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
73109.pdf
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Technische Details SI4386DY-T1-GE3

Description: MOSFET N-CH 30V 11A 8SO, Manufacturer: Vishay Siliconix, Packaging: Cut Tape (CT), Part Status: Discontinued at Digi-Key, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V, Vgs (Max): ±20V, Power Dissipation (Max): 1.47W (Ta), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 8-SOIC, Package / Case: 8-SOIC (0.154", 3.90mm Width), Base Part Number: SI4386.

Preis SI4386DY-T1-GE3 ab 0 EUR bis 0 EUR

SI4386DY-T1-GE3
SI4386DY-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 30V 16A 3.1W 7.0mohm @ 10V
VISH_S_A0002474498_1-2568262.pdf
auf Bestellung 2480 Stücke
Lieferzeit 14-28 Tag (e)
SI4386DY-T1-GE3
SI4386DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.47W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4386
73109.pdf
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
SI4386DY-T1-GE3
SI4386DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.47W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4386
73109.pdf
auf Bestellung 1873 Stücke
Lieferzeit 21-28 Tag (e)