auf Bestellung 1815 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
76+ | 2 EUR |
82+ | 1.78 EUR |
83+ | 1.7 EUR |
84+ | 1.62 EUR |
100+ | 1.41 EUR |
250+ | 1.33 EUR |
500+ | 1.17 EUR |
1000+ | 1.1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4442DY-T1-E3 Vishay
Description: MOSFET N-CH 30V 15A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 22A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V.
Weitere Produktangebote SI4442DY-T1-E3 nach Preis ab 1.1 EUR bis 5.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI4442DY-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R |
auf Bestellung 1815 Stücke: Lieferzeit 14-21 Tag (e) |
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Si4442DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 15A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 22A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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Si4442DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 15A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 22A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V |
auf Bestellung 6379 Stücke: Lieferzeit 10-14 Tag (e) |
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Si4442DY-T1-E3 | Hersteller : Vishay Semiconductors | MOSFET 30V 22A 3.5W |
auf Bestellung 2206 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4442DYT1E3 | Hersteller : VISHAY |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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Si4442DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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Si4442DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |