auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 72+ | 2.02 EUR |
| 83+ | 1.69 EUR |
| 84+ | 1.61 EUR |
| 85+ | 1.53 EUR |
| 100+ | 1.35 EUR |
| 250+ | 1.18 EUR |
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Technische Details SI4442DY-T1-E3 Vishay
Description: MOSFET N-CH 30V 15A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 22A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V.
Weitere Produktangebote SI4442DY-T1-E3 nach Preis ab 1.18 EUR bis 5.32 EUR
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SI4442DY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R |
auf Bestellung 455 Stücke: Lieferzeit 14-21 Tag (e) |
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Si4442DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 15A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 22A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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Si4442DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 15A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 22A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V |
auf Bestellung 6379 Stücke: Lieferzeit 10-14 Tag (e) |
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Si4442DY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 30V 22A 3.5W |
auf Bestellung 2206 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4442DYT1E3 | Hersteller : VISHAY |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4442DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |