SI4447ADY-T1-GE3

SI4447ADY-T1-GE3

SI4447ADY-T1-GE3

Hersteller: Vishay
Trans MOSFET P-CH 40V 7.2A 8-Pin SOIC N T/R
si4447ad.pdf
verfügbar/auf Bestellung
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Technische Details SI4447ADY-T1-GE3

Description: MOSFET P-CH 40V 7.2A 8SO, Vgs (Max): ±20V, Base Part Number: SI4447, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SOIC, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), Drain to Source Voltage (Vdss): 40V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 4.2W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 20V.

Preis SI4447ADY-T1-GE3 ab 0 EUR bis 0 EUR

SI4447ADY-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 40V 7.2A 8-Pin SOIC N T/R
si4447ad.pdf si4447ad.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4447ADY-T1-GE3
SI4447ADY-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET -40V Vds 20V Vgs SO-8
VISH_S_A0002474133_1-2568252.pdf
auf Bestellung 22 Stücke
Lieferzeit 14-28 Tag (e)
SI4447ADY-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 40V 7.2A 8-Pin SOIC N T/R
si4447ad.pdf si4447ad.pdf
auf Bestellung 1 Stücke
Lieferzeit 14-21 Tag (e)
SI4447ADY-T1-GE3
SI4447ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 7.2A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
si4447ad.pdf
auf Bestellung 11929 Stücke
Lieferzeit 21-28 Tag (e)
SI4447ADY-T1-GE3
SI4447ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 7.2A 8SO
Vgs (Max): ±20V
Base Part Number: SI4447
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 20V
si4447ad.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4447ADY-T1-GE3
SI4447ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 7.2A 8SO
Base Part Number: SI4447
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
si4447ad.pdf
auf Bestellung 2075 Stücke
Lieferzeit 21-28 Tag (e)