auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI9407BDY-T1-E3 Vishay
Description: MOSFET P-CH 60V 4.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V.
Weitere Produktangebote SI9407BDY-T1-E3 nach Preis ab 0.61 EUR bis 3.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI9407BDY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SI9407BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 1188 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SI9407BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 1188 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SI9407BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 4.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
SI9407BDY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET -60V Vds 20V Vgs SO-8 |
auf Bestellung 86669 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
|
SI9407BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 4.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V |
auf Bestellung 20469 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
SI9407BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| SI9407BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
|
SI9407BDY-T1-E3 Produktcode: 183584 |
Verschiedene Bauteile > Verschiedene Bauteile 1 |
Produkt ist nicht verfügbar
|
|||||||||||||||||||
 |
SI9407BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.7A; Idm: -20A; 3.2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.7A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SI9407BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.7A; Idm: -20A; 3.2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.7A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |