SI9407BDY-T1-E3
Produktcode: 183584
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Weitere Produktangebote SI9407BDY-T1-E3 nach Preis ab 0.89 EUR bis 3.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SI9407BDY-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 4.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9407BDY-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 1852 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | Vishay Semiconductors |
MOSFETs -60V Vds 20V Vgs SO-8 |
auf Bestellung 272 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9407BDY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 4.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V |
auf Bestellung 10609 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9407BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1852 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SI9407BDY-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| SI9407BDYT1E3 | VISHAY |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI9407BDY-T1-E3 |
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Hersteller: Vishay
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.89 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.89 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.01 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.01 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Description: MOSFET P-CH 60V 4.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.08 EUR |
| 7500+ | 0.96 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 116+ | 1.56 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
auf Bestellung 1852 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 75+ | 2.42 EUR |
| 100+ | 1.83 EUR |
| 250+ | 1.49 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 0.95 EUR |
| SI9407BDY-T1-E3 |
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Hersteller: Vishay Semiconductors
MOSFETs -60V Vds 20V Vgs SO-8
MOSFETs -60V Vds 20V Vgs SO-8
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.72 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.12 EUR |
| 2500+ | 0.95 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Description: MOSFET P-CH 60V 4.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
auf Bestellung 10609 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.86 EUR |
| 10+ | 2.45 EUR |
| 50+ | 1.84 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.31 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1852 Stücke:
Lieferzeit 14-21 Tag (e)
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
| SI9407BDYT1E3 |
Hersteller: VISHAY
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)