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Technische Details SI9407BDY-T1-E3 Vishay
Description: VISHAY - SI9407BDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 60 V, 4.7 A, 0.12 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 4.7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 5W, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.12ohm.
Weitere Produktangebote SI9407BDY-T1-E3 nach Preis ab 0.73 EUR bis 4.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI9407BDY-T1-E3 | Vishay |
 Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 4.7A 8SO Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9407BDY-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 1888 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1888 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | VISHAY |
Description: VISHAY - SI9407BDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 60 V, 4.7 A, 0.12 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | Vishay Semiconductors |
MOSFETs -60V Vds 20V Vgs SO-8 |
auf Bestellung 54912 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9407BDY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 4.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V |
auf Bestellung 11168 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9407BDY-T1-E3 | VISHAY |
Description: VISHAY - SI9407BDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 60 V, 4.7 A, 0.12 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 4.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 5W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.12ohm |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9407BDY-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SI9407BDYT1E3 | VISHAY |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI9407BDY-T1-E3 |
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Hersteller: Vishay
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.96 EUR |
| SI9407BDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Description: MOSFET P-CH 60V 4.7A 8SO
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.04 EUR |
| 7500+ | 0.93 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 116+ | 1.49 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 86+ | 2.01 EUR |
| 108+ | 1.58 EUR |
| 250+ | 1.36 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.12 EUR |
| SI9407BDY-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 42+ | 2.06 EUR |
| 59+ | 1.44 EUR |
| 70+ | 1.23 EUR |
| 100+ | 0.98 EUR |
| 250+ | 0.86 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.73 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: VISHAY
Description: VISHAY - SI9407BDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 60 V, 4.7 A, 0.12 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: VISHAY - SI9407BDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 60 V, 4.7 A, 0.12 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.69 EUR |
| 128+ | 1.68 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.23 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -60V Vds 20V Vgs SO-8
MOSFETs -60V Vds 20V Vgs SO-8
auf Bestellung 54912 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.7 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 1.06 EUR |
| 2500+ | 0.95 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Description: MOSFET P-CH 60V 4.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
auf Bestellung 11168 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.71 EUR |
| 10+ | 2.36 EUR |
| 50+ | 1.77 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.26 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: VISHAY
Description: VISHAY - SI9407BDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 60 V, 4.7 A, 0.12 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 5W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.12ohm
Description: VISHAY - SI9407BDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 60 V, 4.7 A, 0.12 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 5W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.12ohm
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 4.57 EUR |
| 87+ | 2.69 EUR |
| 128+ | 1.68 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.23 EUR |
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
| SI9407BDYT1E3 |
Hersteller: VISHAY
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)