YJL02N10A

YJL02N10A YANGJIE TECHNOLOGY


YJL02N10A.pdf Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
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Technische Details YJL02N10A YANGJIE TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W, Type of transistor: N-MOSFET, Technology: TRENCH POWER MV, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 1.6A, Pulsed drain current: 8A, Power dissipation: 1.2W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 0.31Ω, Mounting: SMD, Gate charge: 5.3nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 10 Stücke.

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YJL02N10A YJL02N10A Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd YJL02N10A.pdf Description: N-CH MOSFET 100V 2A SOT-23-3L
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YJL02N10A YJL02N10A Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd YJL02N10A.pdf Description: N-CH MOSFET 100V 2A SOT-23-3L
Produkt ist nicht verfügbar
YJL02N10A YJL02N10A Hersteller : YANGJIE TECHNOLOGY YJL02N10A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar