A1C15S12M3 STMicroelectronics
Hersteller: STMicroelectronicsIGBT Modules ACEPACK 1 converter inverter brake 1200 V, 15 A trench gate field-stop IGBT M se
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 88.16 EUR |
| 10+ | 75.19 EUR |
| 18+ | 70.66 EUR |
| 108+ | 66.55 EUR |
| 252+ | 65.98 EUR |
| 504+ | 65 EUR |
| 1008+ | 64.56 EUR |
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Technische Details A1C15S12M3 STMicroelectronics
Description: IGBT MOD 1200V 15A ACEPACK1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 142.8 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 985 pF @ 25 V.
Weitere Produktangebote A1C15S12M3
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A1C15S12M3 | Hersteller : STMicroelectronics |
Trans IGBT Module N-CH 1200V 15A 142800mW 23-Pin ACEPACK-1 Tray |
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A1C15S12M3 | Hersteller : STMicroelectronics |
Description: IGBT MOD 1200V 15A ACEPACK1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A NTC Thermistor: Yes Supplier Device Package: ACEPACK™ 1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 142.8 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 985 pF @ 25 V |
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| A1C15S12M3 | Hersteller : STMicroelectronics |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Application: Inverter; motors Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 142.8W Max. off-state voltage: 1.2kV Case: ACEPACK™1 Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor |
Produkt ist nicht verfügbar |