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A1P25S12M3-F

A1P25S12M3-F STMicroelectronics


dm00430299-1799198.pdf
Hersteller: STMicroelectronics
IGBT Modules PTD NEW MAT & PWR SOLUTION
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Technische Details A1P25S12M3-F STMicroelectronics

Description: IGBT MOD 1200V 25A 197W ACEPACK1, Input Capacitance (Cies) @ Vce: 1.55 nF @ 25 V, Current - Collector Cutoff (Max): 100 µA, Power - Max: 197 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 25 A, IGBT Type: Trench Field Stop, Supplier Device Package: ACEPACK™ 1, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 25A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.

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A1P25S12M3-F A1P25S12M3-F Hersteller : STMicroelectronics a1p25s12m3-f.pdf Description: IGBT MOD 1200V 25A 197W ACEPACK1
Input Capacitance (Cies) @ Vce: 1.55 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 197 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
IGBT Type: Trench Field Stop
Supplier Device Package: ACEPACK™ 1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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