A2G22S251-01SR3 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET GAN 48V NI400
Packaging: Tape & Reel (TR)
Package / Case: NI-400S-2S
Mounting Type: Surface Mount
Frequency: 1.805GHz ~ 2.2GHz
Power - Output: 52dBm
Gain: 17.7dB
Technology: GaN
Supplier Device Package: NI-400S-2S
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 200 mA
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Technische Details A2G22S251-01SR3 NXP USA Inc.
Description: RF MOSFET GAN 48V NI400, Packaging: Tape & Reel (TR), Package / Case: NI-400S-2S, Mounting Type: Surface Mount, Frequency: 1.805GHz ~ 2.2GHz, Power - Output: 52dBm, Gain: 17.7dB, Technology: GaN, Supplier Device Package: NI-400S-2S, Part Status: Active, Voltage - Rated: 125 V, Voltage - Test: 48 V, Current - Test: 200 mA.
Weitere Produktangebote A2G22S251-01SR3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| A2G22S251-01SR3 | Hersteller : NXP Semiconductors |
RF Amplifier Airfast RF Power GaN Transistor, 1805-2200 MHz, 48 W Avg., 48 V |
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