Technische Details A2G35S200-01SR3 NXP Semiconductors
Description: RF MOSFET GAN HEMT 48V NI400, Packaging: Tape & Reel (TR), Package / Case: NI-400S-2S, Mounting Type: Surface Mount, Frequency: 3.4GHz ~ 3.6GHz, Power - Output: 180W, Gain: 16.1dB, Technology: GaN HEMT, Supplier Device Package: NI-400S-2S, Part Status: Active, Voltage - Rated: 125 V, Voltage - Test: 48 V, Current - Test: 291 mA.
Weitere Produktangebote A2G35S200-01SR3 nach Preis ab 243.34 EUR bis 300 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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A2G35S200-01SR3 | NXP USA Inc. |
 Description: RF MOSFET GAN HEMT 48V NI400Current - Test: 291 mA Voltage - Test: 48 V Voltage - Rated: 125 V Part Status: Active Supplier Device Package: NI-400S-2S Technology: GaN HEMT Gain: 16.1dB Power - Output: 180W Frequency: 3.4GHz ~ 3.6GHz Mounting Type: Surface Mount Package / Case: NI-400S-2S Packaging: Cut Tape (CT) |
auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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| A2G35S200-01SR3 |
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Hersteller: NXP USA Inc.
Description: RF MOSFET GAN HEMT 48V NI400
Current - Test: 291 mA
Voltage - Test: 48 V
Voltage - Rated: 125 V
Part Status: Active
Supplier Device Package: NI-400S-2S
Technology: GaN HEMT
Gain: 16.1dB
Power - Output: 180W
Frequency: 3.4GHz ~ 3.6GHz
Mounting Type: Surface Mount
Package / Case: NI-400S-2S
Packaging: Cut Tape (CT)
Description: RF MOSFET GAN HEMT 48V NI400
Current - Test: 291 mA
Voltage - Test: 48 V
Voltage - Rated: 125 V
Part Status: Active
Supplier Device Package: NI-400S-2S
Technology: GaN HEMT
Gain: 16.1dB
Power - Output: 180W
Frequency: 3.4GHz ~ 3.6GHz
Mounting Type: Surface Mount
Package / Case: NI-400S-2S
Packaging: Cut Tape (CT)
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 300 EUR |
| 10+ | 254.66 EUR |
| 25+ | 243.34 EUR |