A2T18H100-25SR3 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI780
Packaging: Tape & Reel (TR)
Package / Case: NI-780-4S4
Mounting Type: Chassis Mount
Frequency: 1.81GHz
Configuration: Dual
Power - Output: 18W
Gain: 18.1dB
Technology: LDMOS
Supplier Device Package: NI-780-4S4
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
Description: RF MOSFET LDMOS 28V NI780
Packaging: Tape & Reel (TR)
Package / Case: NI-780-4S4
Mounting Type: Chassis Mount
Frequency: 1.81GHz
Configuration: Dual
Power - Output: 18W
Gain: 18.1dB
Technology: LDMOS
Supplier Device Package: NI-780-4S4
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
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Technische Details A2T18H100-25SR3 NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI780, Packaging: Tape & Reel (TR), Package / Case: NI-780-4S4, Mounting Type: Chassis Mount, Frequency: 1.81GHz, Configuration: Dual, Power - Output: 18W, Gain: 18.1dB, Technology: LDMOS, Supplier Device Package: NI-780-4S4, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 230 mA.
Weitere Produktangebote A2T18H100-25SR3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| A2T18H100-25SR3 | Hersteller : NXP Semiconductors |
 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V |
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