Technische Details A2T18H100-25SR3 NXP Semiconductors
Description: RF MOSFET LDMOS 28V NI780, Packaging: Tape & Reel (TR), Package / Case: NI-780-4S4, Mounting Type: Chassis Mount, Frequency: 1.81GHz, Configuration: Dual, Power - Output: 18W, Gain: 18.1dB, Technology: LDMOS, Supplier Device Package: NI-780-4S4, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 230 mA.
Weitere Produktangebote A2T18H100-25SR3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| A2T18H100-25SR3 | Hersteller : NXP USA Inc. |
Description: RF MOSFET LDMOS 28V NI780 Packaging: Tape & Reel (TR) Package / Case: NI-780-4S4 Mounting Type: Chassis Mount Frequency: 1.81GHz Configuration: Dual Power - Output: 18W Gain: 18.1dB Technology: LDMOS Supplier Device Package: NI-780-4S4 Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 230 mA |
Produkt ist nicht verfügbar |
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| A2T18H100-25SR3 | Hersteller : NXP Semiconductors |
 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V |
Produkt ist nicht verfügbar |