Technische Details A2T18H410-24SR6 NXP Semiconductors
Description: RF MOSFET LDMOS 28V NI1230, Packaging: Tape & Reel (TR), Package / Case: NI-1230-4LS2L, Mounting Type: Chassis Mount, Frequency: 1.81GHz, Configuration: Dual, Power - Output: 71W, Gain: 17.4dB, Technology: LDMOS, Supplier Device Package: NI-1230-4LS2L, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 800 mA.
Weitere Produktangebote A2T18H410-24SR6
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A2T18H410-24SR6 | Hersteller : NXP USA Inc. |
 Description: RF MOSFET LDMOS 28V NI1230Packaging: Tape & Reel (TR) Package / Case: NI-1230-4LS2L Mounting Type: Chassis Mount Frequency: 1.81GHz Configuration: Dual Power - Output: 71W Gain: 17.4dB Technology: LDMOS Supplier Device Package: NI-1230-4LS2L Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 800 mA |
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| A2T18H410-24SR6 | Hersteller : NXP Semiconductors |
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 71 W Avg., 28 V |
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