A2T18H410-24SR6 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI1230
Current - Test: 800 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Supplier Device Package: NI-1230-4LS2L
Technology: LDMOS
Gain: 17.4dB
Power - Output: 71W
Configuration: Dual
Frequency: 1.81GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230-4LS2L
Packaging: Tape & Reel (TR)
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Technische Details A2T18H410-24SR6 NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI1230, Current - Test: 800 mA, Voltage - Test: 28 V, Voltage - Rated: 65 V, Supplier Device Package: NI-1230-4LS2L, Technology: LDMOS, Gain: 17.4dB, Power - Output: 71W, Configuration: Dual, Frequency: 1.81GHz, Mounting Type: Chassis Mount, Package / Case: NI-1230-4LS2L, Packaging: Tape & Reel (TR).
Weitere Produktangebote A2T18H410-24SR6
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| A2T18H410-24SR6 | Hersteller : NXP Semiconductors |
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 71 W Avg., 28 V |
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