Technische Details A2T23H160-24SR3 NXP Semiconductors
Description: RF MOSFET LDMOS 28V NI780, Packaging: Tape & Reel (TR), Package / Case: NI-780S-4L2L, Mounting Type: Chassis Mount, Frequency: 2.3GHz, Configuration: Dual, Power - Output: 28W, Gain: 17.7dB, Technology: LDMOS, Supplier Device Package: NI-780S-4L2L, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 350 mA.
Weitere Produktangebote A2T23H160-24SR3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| A2T23H160-24SR3 | Hersteller : NXP USA Inc. |
Description: RF MOSFET LDMOS 28V NI780 Packaging: Tape & Reel (TR) Package / Case: NI-780S-4L2L Mounting Type: Chassis Mount Frequency: 2.3GHz Configuration: Dual Power - Output: 28W Gain: 17.7dB Technology: LDMOS Supplier Device Package: NI-780S-4L2L Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 350 mA |
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| A2T23H160-24SR3 | Hersteller : NXP Semiconductors |
 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 28 W Avg., 28 V |
Produkt ist nicht verfügbar |