A2T23H200W23SR6 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 28V ACP1230S-4
Packaging: Tape & Reel (TR)
Package / Case: ACP-1230S-4L2S
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 2.3GHz ~ 2.4GHz
Power - Output: 51W
Gain: 15.5dB
Technology: LDMOS
Supplier Device Package: ACP-1230S-4L2S
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 500 mA
Description: RF MOSFET LDMOS 28V ACP1230S-4
Packaging: Tape & Reel (TR)
Package / Case: ACP-1230S-4L2S
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 2.3GHz ~ 2.4GHz
Power - Output: 51W
Gain: 15.5dB
Technology: LDMOS
Supplier Device Package: ACP-1230S-4L2S
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 500 mA
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details A2T23H200W23SR6 NXP USA Inc.
Description: RF MOSFET LDMOS 28V ACP1230S-4, Packaging: Tape & Reel (TR), Package / Case: ACP-1230S-4L2S, Current Rating (Amps): 10µA, Mounting Type: Chassis Mount, Frequency: 2.3GHz ~ 2.4GHz, Power - Output: 51W, Gain: 15.5dB, Technology: LDMOS, Supplier Device Package: ACP-1230S-4L2S, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 500 mA.
Weitere Produktangebote A2T23H200W23SR6
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
A2T23H200W23SR6 | Hersteller : NXP Semiconductors | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 51 W Avg., 28 V |
Produkt ist nicht verfügbar |