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A2T23H200W23SR6 NXP USA Inc.


A2T23H200W23S.pdf Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 28V ACP1230S-4
Packaging: Tape & Reel (TR)
Package / Case: ACP-1230S-4L2S
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 2.3GHz ~ 2.4GHz
Power - Output: 51W
Gain: 15.5dB
Technology: LDMOS
Supplier Device Package: ACP-1230S-4L2S
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 500 mA
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Technische Details A2T23H200W23SR6 NXP USA Inc.

Description: RF MOSFET LDMOS 28V ACP1230S-4, Packaging: Tape & Reel (TR), Package / Case: ACP-1230S-4L2S, Current Rating (Amps): 10µA, Mounting Type: Chassis Mount, Frequency: 2.3GHz ~ 2.4GHz, Power - Output: 51W, Gain: 15.5dB, Technology: LDMOS, Supplier Device Package: ACP-1230S-4L2S, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 500 mA.

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A2T23H200W23SR6 A2T23H200W23SR6 Hersteller : NXP Semiconductors A2T23H200W23S-1387452.pdf RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 51 W Avg., 28 V
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