Technische Details A2T23H300-24SR6 NXP Semiconductors
Description: RF MOSFET LDMOS 28V NI1230, Packaging: Tape & Reel (TR), Package / Case: NI-1230-4LS2L, Mounting Type: Chassis Mount, Frequency: 2.3GHz, Configuration: Dual, Power - Output: 66W, Gain: 14.9dB, Technology: LDMOS, Supplier Device Package: NI-1230-4LS2L, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 750 mA.
Weitere Produktangebote A2T23H300-24SR6
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| A2T23H300-24SR6 | Hersteller : NXP Semiconductors |
 RF POWER LDMOS TRANSISTOR |
Produkt ist nicht verfügbar |
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A2T23H300-24SR6 | Hersteller : NXP USA Inc. |
Description: RF MOSFET LDMOS 28V NI1230 Packaging: Tape & Reel (TR) Package / Case: NI-1230-4LS2L Mounting Type: Chassis Mount Frequency: 2.3GHz Configuration: Dual Power - Output: 66W Gain: 14.9dB Technology: LDMOS Supplier Device Package: NI-1230-4LS2L Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 750 mA |
Produkt ist nicht verfügbar |
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A2T23H300-24SR6 | Hersteller : NXP USA Inc. |
Description: RF MOSFET LDMOS 28V NI1230 Packaging: Cut Tape (CT) Package / Case: NI-1230-4LS2L Mounting Type: Chassis Mount Frequency: 2.3GHz Configuration: Dual Power - Output: 66W Gain: 14.9dB Technology: LDMOS Supplier Device Package: NI-1230-4LS2L Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 750 mA |
Produkt ist nicht verfügbar |
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| A2T23H300-24SR6 | Hersteller : NXP Semiconductors |
RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR, 2300-2400 MHz, 69 W Avg., 28 V |
Produkt ist nicht verfügbar |