Technische Details A3G23H500W17SR3 NXP Semiconductors
Description: RF MOSFET GAN 48V NI780, Packaging: Tape & Reel (TR), Package / Case: NI-780-4S2S, Mounting Type: Chassis Mount, Frequency: 2.3GHz ~ 2.4GHz, Configuration: 2 N-Channel, Power - Output: 80W, Gain: 14.3dB, Technology: GaN, Supplier Device Package: NI-780-4S2S, Voltage - Rated: 125 V, Voltage - Test: 48 V, Current - Test: 300 mA.
Weitere Produktangebote A3G23H500W17SR3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| A3G23H500W17SR3 | Hersteller : NXP USA Inc. |
Description: RF MOSFET GAN 48V NI780 Packaging: Tape & Reel (TR) Package / Case: NI-780-4S2S Mounting Type: Chassis Mount Frequency: 2.3GHz ~ 2.4GHz Configuration: 2 N-Channel Power - Output: 80W Gain: 14.3dB Technology: GaN Supplier Device Package: NI-780-4S2S Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 300 mA |
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| A3G23H500W17SR3 | Hersteller : NXP Semiconductors |
 RF JFET Transistors Airfast RF Power GaN Transistor, 2300 2400 MHz, 80 W Avg., 48 V |
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