A3G23H500W17SR3 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET GAN 48V NI780
Packaging: Tape & Reel (TR)
Package / Case: NI-780-4S2S
Mounting Type: Chassis Mount
Frequency: 2.3GHz ~ 2.4GHz
Configuration: 2 N-Channel
Power - Output: 80W
Gain: 14.3dB
Technology: GaN
Supplier Device Package: NI-780-4S2S
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 300 mA
Description: RF MOSFET GAN 48V NI780
Packaging: Tape & Reel (TR)
Package / Case: NI-780-4S2S
Mounting Type: Chassis Mount
Frequency: 2.3GHz ~ 2.4GHz
Configuration: 2 N-Channel
Power - Output: 80W
Gain: 14.3dB
Technology: GaN
Supplier Device Package: NI-780-4S2S
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 300 mA
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Technische Details A3G23H500W17SR3 NXP USA Inc.
Description: RF MOSFET GAN 48V NI780, Packaging: Tape & Reel (TR), Package / Case: NI-780-4S2S, Mounting Type: Chassis Mount, Frequency: 2.3GHz ~ 2.4GHz, Configuration: 2 N-Channel, Power - Output: 80W, Gain: 14.3dB, Technology: GaN, Supplier Device Package: NI-780-4S2S, Voltage - Rated: 125 V, Voltage - Test: 48 V, Current - Test: 300 mA.
Weitere Produktangebote A3G23H500W17SR3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| A3G23H500W17SR3 | Hersteller : NXP Semiconductors |
 RF JFET Transistors Airfast RF Power GaN Transistor, 2300 2400 MHz, 80 W Avg., 48 V |
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