Produkte > NXP USA INC. > A3G26D055N-2515
A3G26D055N-2515

A3G26D055N-2515 NXP USA Inc.


A3G26D055N.pdf
Hersteller: NXP USA Inc.
Description: RF MOSFET GAN 48V 6DFN
Current - Test: 40 mA
Voltage - Test: 48 V
Voltage - Rated: 125 V
Supplier Device Package: 6-PDFN (7x6.5)
Technology: GaN
Gain: 13.9dB
Power - Output: 8W
Frequency: 100MHz ~ 2.69GHz
Mounting Type: Surface Mount
Package / Case: 6-LDFN Exposed Pad
Packaging: Bulk
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Technische Details A3G26D055N-2515 NXP USA Inc.

Description: RF MOSFET GAN 48V 6DFN, Current - Test: 40 mA, Voltage - Test: 48 V, Voltage - Rated: 125 V, Supplier Device Package: 6-PDFN (7x6.5), Technology: GaN, Gain: 13.9dB, Power - Output: 8W, Frequency: 100MHz ~ 2.69GHz, Mounting Type: Surface Mount, Package / Case: 6-LDFN Exposed Pad, Packaging: Bulk.