ACMSP3415-HF Comchip Technology
auf Bestellung 1785 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.28 EUR |
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Technische Details ACMSP3415-HF Comchip Technology
Description: MOSFET P-CH 20V 4A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote ACMSP3415-HF nach Preis ab 0.40 EUR bis 1.18 EUR
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ACMSP3415-HF | Hersteller : Comchip Technology |
 Description: MOSFET P-CH 20V 4A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2872 Stücke: Lieferzeit 10-14 Tag (e) |
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ACMSP3415-HF | Hersteller : Comchip Technology |
Description: MOSFET P-CH 20V 4A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
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