ADS065J020C3-ASATH Sanan Semiconductor
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.13 EUR |
| 10+ | 4.29 EUR |
| 100+ | 4.14 EUR |
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Technische Details ADS065J020C3-ASATH Sanan Semiconductor
Description: DIODE 650V-20A TO220-2L, AUTOMOT, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1018pF @ 0V, 1MHz, Current - Average Rectified (Io): 51A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote ADS065J020C3-ASATH nach Preis ab 7.69 EUR bis 11.32 EUR
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ADS065J020C3-ASATH | Hersteller : Luminus Devices Inc. |
 Description: DIODE 650V-20A TO220-2L, AUTOMOTPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1018pF @ 0V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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