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ADTA144ELP4WQ-7B Diodes Incorporated

Hersteller: Diodes Incorporated
Digital Transistors Prebias Transistor U-DFN1006-3 T&R 10K

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Lieferzeit 10-14 Tag (e)

Anzahl	Preis
6+	0.56 EUR
10+	0.32 EUR
100+	0.2 EUR
500+	0.14 EUR
1000+	0.12 EUR
2500+	0.11 EUR
5000+	0.092 EUR

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Technische Details ADTA144ELP4WQ-7B Diodes Incorporated

Description: PREBIAS TRANSISTOR U-DFN1003-3 T, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Supplier Device Package: U-DFN1006-3/SWP (Type UX), Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 255 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Qualification: AEC-Q101.

Weitere Produktangebote ADTA144ELP4WQ-7B

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
	ADTA144ELP4WQ-7B	Diodes Incorporated	Description: PREBIAS TRANSISTOR U-DFN1003-3 T Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 255 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101	Produkt ist nicht verfügbar Benachrichtigung bei Verfügbarkeit	Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH

ADTA144ELP4WQ-7B

Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR U-DFN1003-3 T
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 255 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101

Produkt ist nicht verfügbar

Mindestbestellmenge: 10000 Stücke

Im Einkaufswagen Stück im Wert von UAH