Technische Details AFGH4L60T120RWD-STD onsemi
Description: IGBT TRENCH FS 1200V 73A TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 308 ns, Vce(on) (Max) @ Vge, Ic: 2.01V @ 15V, 60A, Supplier Device Package: TO-247-4L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 68ns/264ns, Switching Energy: 3.03mJ (on), 3.98mJ (off), Test Condition: 600V, 60A, 6Ohm, 15V, Gate Charge: 171 nC, Grade: Automotive, Current - Collector (Ic) (Max): 73 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 287 W, Qualification: AEC-Q101.
Weitere Produktangebote AFGH4L60T120RWD-STD nach Preis ab 7.63 EUR bis 16.24 EUR
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AFGH4L60T120RWD-STD | onsemi |
 Description: IGBT TRENCH FS 1200V 73A TO-247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 308 ns Vce(on) (Max) @ Vge, Ic: 2.01V @ 15V, 60A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 68ns/264ns Switching Energy: 3.03mJ (on), 3.98mJ (off) Test Condition: 600V, 60A, 6Ohm, 15V Gate Charge: 171 nC Grade: Automotive Current - Collector (Ic) (Max): 73 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 287 W Qualification: AEC-Q101 |
auf Bestellung 3150 Stücke: Lieferzeit 10-14 Tag (e) |
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AFGH4L60T120RWD-STD | ONSEMI |
Description: ONSEMI - AFGH4L60T120RWD-STD - IGBT, 73 A, 1.68 V, 287 W, 1.2 kV, TO-247, 4 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.68V usEccn: EAR99 euEccn: NLR Verlustleistung: 287W Bauform - Transistor: TO-247 Dauerkollektorstrom: 73A Anzahl der Pins: 4Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AFGH4L60T120RWD-STD |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 73A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 308 ns
Vce(on) (Max) @ Vge, Ic: 2.01V @ 15V, 60A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 68ns/264ns
Switching Energy: 3.03mJ (on), 3.98mJ (off)
Test Condition: 600V, 60A, 6Ohm, 15V
Gate Charge: 171 nC
Grade: Automotive
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 287 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 1200V 73A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 308 ns
Vce(on) (Max) @ Vge, Ic: 2.01V @ 15V, 60A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 68ns/264ns
Switching Energy: 3.03mJ (on), 3.98mJ (off)
Test Condition: 600V, 60A, 6Ohm, 15V
Gate Charge: 171 nC
Grade: Automotive
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 287 W
Qualification: AEC-Q101
auf Bestellung 3150 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 16.24 EUR |
| 10+ | 11.23 EUR |
| 100+ | 8.39 EUR |
| 500+ | 7.63 EUR |
| AFGH4L60T120RWD-STD |
|
Hersteller: ONSEMI
Description: ONSEMI - AFGH4L60T120RWD-STD - IGBT, 73 A, 1.68 V, 287 W, 1.2 kV, TO-247, 4 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.68V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 287W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 73A
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - AFGH4L60T120RWD-STD - IGBT, 73 A, 1.68 V, 287 W, 1.2 kV, TO-247, 4 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.68V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 287W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 73A
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH