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AFT21H350W03SR6

AFT21H350W03SR6 NXP USA Inc.


Hersteller: NXP USA Inc.
Description: FET RF 2CH 65V 2.11GHZ NI1230S
Current - Test: 750 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: NI-1230S
Technology: LDMOS
Gain: 16.4dB
Power - Output: 63W
Frequency: 2.11GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230S
Packaging: Tape & Reel (TR)
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Technische Details AFT21H350W03SR6 NXP USA Inc.

Description: FET RF 2CH 65V 2.11GHZ NI1230S, Current - Test: 750 mA, Voltage - Test: 28 V, Voltage - Rated: 65 V, Part Status: Obsolete, Supplier Device Package: NI-1230S, Technology: LDMOS, Gain: 16.4dB, Power - Output: 63W, Frequency: 2.11GHz, Mounting Type: Chassis Mount, Package / Case: NI-1230S, Packaging: Tape & Reel (TR).

Weitere Produktangebote AFT21H350W03SR6

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
AFT21H350W03SR6 AFT21H350W03SR6 NXP USA Inc. Description: FET RF 2CH 65V 2.11GHZ NI1230S
Current - Test: 750 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: NI-1230S
Technology: LDMOS
Gain: 16.4dB
Power - Output: 63W
Frequency: 2.11GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230S
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AFT21H350W03SR6
AFT21H350W03SR6
Hersteller: NXP USA Inc.
Description: FET RF 2CH 65V 2.11GHZ NI1230S
Current - Test: 750 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: NI-1230S
Technology: LDMOS
Gain: 16.4dB
Power - Output: 63W
Frequency: 2.11GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230S
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH