AFT23H200-4S2LR6 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI1230
Current - Test: 500 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Supplier Device Package: NI-1230-4LS2L
Technology: LDMOS
Gain: 15.3dB
Power - Output: 45W
Configuration: Dual
Frequency: 2.3GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230-4LS2L
Packaging: Tape & Reel (TR)
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Technische Details AFT23H200-4S2LR6 NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI1230, Current - Test: 500 mA, Voltage - Test: 28 V, Voltage - Rated: 65 V, Supplier Device Package: NI-1230-4LS2L, Technology: LDMOS, Gain: 15.3dB, Power - Output: 45W, Configuration: Dual, Frequency: 2.3GHz, Mounting Type: Chassis Mount, Package / Case: NI-1230-4LS2L, Packaging: Tape & Reel (TR).
Weitere Produktangebote AFT23H200-4S2LR6
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| AFT23H200-4S2LR6 | Hersteller : NXP Semiconductors |
 RF MOSFET Transistors HV9 2GHz 45W NI1230-4S2L |
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