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AG532EES4FRATCB

AG532EES4FRATCB Rohm Semiconductor

ag532ees4fratcb-e.pdf Hersteller: Rohm Semiconductor
Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.97 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AG532EES4FRATCB Rohm Semiconductor

Description: PCH -30V -85A, HPLF5060T5LSAH, P, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, Supplier Device Package: HPLF5060T5LSAH, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V, Qualification: AEC-Q101.

Weitere Produktangebote AG532EES4FRATCB nach Preis ab 1.15 EUR bis 3.41 EUR

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AG532EES4FRATCB AG532EES4FRATCB Hersteller : Rohm Semiconductor ag532ees4fratcb-e.pdf Trans MOSFET P-CH 30V 85A 5-Pin(4+Tab) HPLF Automotive AEC-Q101
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+1.8 EUR
100+1.65 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
AG532EES4FRATCB AG532EES4FRATCB Hersteller : Rohm Semiconductor ag532ees4fratcb-e.pdf Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.19 EUR
100+1.49 EUR
500+1.19 EUR
1000+1.15 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
AG532EES4FRATCB AG532EES4FRATCB Hersteller : Rohm Semiconductor ag532ees4fratcb-e.pdf Trans MOSFET P-CH 30V 85A 5-Pin(4+Tab) HPLF Automotive AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH